hi-sincerity microelectronics corp. spec. no. : mos200613 issued date : 2006.07.01 revised date : 2006.07.12 page no. : 1/4 H2302N hsmc product specification H2302N n-channel enhancement-mode mosfet (20v, 2.4a) features ? r ds(on) <60m ? @v gs =4.5v, i d =2.8a ? r ds(on) <115m ? @v gs =-2.5v, i d =2a ? advanced trench process technology ? high density cell design for ultra low on-resistance ? fully characterized avalanche voltage and current ? improved shoot-through fom absolute maximum ratings (t a =25 o c, unless otherwise noted) symbol parameter ratings units v ds drain-source voltage 20 v v gs gate-source voltage 8 v i d drain current (continuous) 2.4 a i dm drain current (pulsed) *1 8 a total power dissipation @t a =25 o c 0.9 w p d total power dissipation @t a =75 o c 0.57 w t j , t stg operating junction and storage temperature range -55 to +150 c r ja thermal resistance junction to ambient (pcb mounted) *2 145 c/w *1: repetitive rating: pulse width limited by the maximum junction temperation. *2: 1-in 2 2oz cu pcb board H2302N pin assignment & symbol 3-lead plastic sot-23 package code: n pin 1: gate 2: source 3: drain 1 2 3 gate drain source
hi-sincerity microelectronics corp. spec. no. : mos200613 issued date : 2006.07.01 revised date : 2006.07.12 page no. : 2/4 H2302N hsmc product specification electrical characteristics (t a =25 c, unless otherwise noted) symbol characteristic test c onditions min. typ. max. unit ? static bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v v gs =4.5v, i d =2.8a - 45 60 r ds(on) drain-source on-state resistance v gs =2.5v, i d =2a - 70 115 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.65 0.95 1.2 v i dss zero gate voltage drain current v ds =9.6v, v gs =0v - - 1 ua i gss gate-body leakage current v gs = 8v, v ds =0v - - 100 na g fs forward transconductance v ds =5v, i d =4a - 6.5 - s ? dynamic q g total gate charge - 3.69 - q gs gate-source charge - 0.7 - q gd gate-drain charge v ds =6v, i d =2.8a, v gs =4.5v - 1.06 - nc c iss input capacitance - 427.12 - c oss output capacitance - 80.56 - c rss reverse transfer capacitance v ds =6v, v gs =0v, f=1mhz - 57 - pf t d(on) turn-on delay time - 6.16 - t r turn-on rise time - 7.56 - t d(off) turn-off delay time - 16.61 - t f turn-off fall time v dd =6v, r l =6 ? , i d =1a, v gen =4.5v, r g =6 ? - 4.07 - ns ? drain-source diode characteristics i s maximum diode forward current - - 2.4 a v sd drain-source diode forward voltage v gs =0v, i s =0.75a - 0.8 1.2 v note: pulse test: pulse width 300us, duty cycle 2%
hi-sincerity microelectronics corp. spec. no. : mos200613 issued date : 2006.07.01 revised date : 2006.07.12 page no. : 3/4 H2302N hsmc product specification sot-23 dimension important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of hsmc. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office and factory: ? head office (hi-sincerity microelectronics corp.): 10f.,no. 61, sec. 2, chung-shan n. rd. taipei taiwan r.o.c. tel: 886-2-25212056 fax: 886-2-25632712, 25368454 ? factory 1: no. 38, kuang fu s. rd., fu-kou hsin-chu industrial park hsin-chu taiwan. r.o.c tel: 886-3-5983621~5 fax: 886-3-5982931 h j k d a l g v c b 3 2 1 s dim min. max. a 2.80 3.04 b 1.20 1.60 c 0.89 1.30 d 0.30 0.50 g 1.70 2.30 h 0.013 0.10 j 0.085 0.177 k 0.32 0.67 l 0.85 1.15 s 2.10 2.75 v 0.25 0.65 *: typical, unit: mm marking: 23 pb free mark pb-free: " " (note) normal: none 02 note: pb-free product c an distinguish by the green label or the extra description on the right side of the label. pin style: 1.gate 2.source 3.drain material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid bu rning class: ul94v-0 3-lead sot-23 plastic surface mounted package hsmc package code: n
hi-sincerity microelectronics corp. spec. no. : mos200613 issued date : 2006.07.01 revised date : 2006.07.12 page no. : 4/4 H2302N hsmc product specification soldering methods for hsmc?s products 1. storage environment: temperature=10 o c~35 o c humidity=65%15% 2. reflow soldering of surface-mount devices profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3 o c/sec <3 o c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100 o c 150 o c 60~120 sec 150 o c 200 o c 60~180 sec ts m a x t o t l - ramp-up rate <3 o c/sec <3 o c/sec time maintained above: - temperature (t l ) - time (t l ) 183 o c 60~150 sec 217 o c 60~150 sec peak temperature (t p ) 240 o c +0/-5 o c 260 o c +0/-5 o c time within 5 o c of actual peak temperature (t p ) 10~30 sec 20~40 sec ramp-down rate <6 o c/sec <6 o c/sec time 25 o c to peak temperature <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245 o c 5 o c 10sec 1sec pb-free devices. 260 o c 5 o c 10sec 1sec figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature
|
